SPD50P03LGXT

Infineon Technologies

SPD50P03LGXT

模拟与电源

MOSFET P-CH 30V 50A TO252-5

停产/老旧TO-252-5, DPak (4 Leads + Tab), TO-252AD模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs7mOhm @ 50A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds6880 pF @ 25 V
制造商Infineon Technologies
安装类型Surface Mount
Product StatusObsolete
系列OptiMOS®-P
技术MOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2V @ 250µA

电气

漏源电压30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
最大功耗150W (Tc)

机械

封装Tape & Reel (TR)
Package / CaseTO-252-5, DPak (4 Leads + Tab), TO-252AD
供应商器件封装PG-TO252-5

环境

工作温度-55°C ~ 175°C (TJ)