来自已导入产品 Attributes 的结构化电气、机械和环境参数。
| Rds On (Max) @ Id, Vgs | 44mOhm @ 26.4A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1570 pF @ 25 V |
| 制造商 | Infineon Technologies |
| 安装类型 | Surface Mount |
| Product Status | Obsolete |
| 系列 | SIPMOS® |
| 技术 | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| 漏源电压 | 100 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| 最大功耗 | 150W (Tc) |
| 封装 | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| 供应商器件封装 | PG-TO252-3 |
| 工作温度 | -55°C ~ 175°C (TJ) |
|---|