SPD09P06PL

Infineon Technologies

SPD09P06PL

模拟与电源

MOSFET P-CH 60V 9.7A TO252-3

已停产TO-252-3, DPak (2 Leads + Tab), SC-63模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs250mOhm @ 6.8A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds450 pF @ 25 V
制造商Infineon Technologies
安装类型Surface Mount
Product StatusDiscontinued at
系列SIPMOS®
技术MOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2V @ 250µA

电气

漏源电压60 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C9.7A (Tc)
最大功耗42W (Tc)

机械

封装Tape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
供应商器件封装PG-TO252-3

环境

工作温度-55°C ~ 175°C (TJ)