SPB80N06SL2-7

Name: SPB80N06SL2-7
Brand: Infineon Technologies

模拟与电源

N-CHANNEL AUTOMOTIVE MOSFET

在产TO-263-3, D²Pak (2 Leads + Tab), TO-263AB模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	7mOhm @ 60A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	3160 pF @ 25 V
制造商	Infineon Technologies
安装类型	Surface Mount
Product Status	Active
系列	OptiMOS®
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2V @ 150µA

漏源电压	55 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
最大功耗	210W (Tc)

工作温度	-55°C~175°C(TJ)