SPB18P06PG

Name: SPB18P06PG
Brand: Infineon Technologies

模拟与电源

SPB18P06 - 20V-250V P-CHANNEL PO

在产TO-263-4, D²Pak (3 Leads + Tab), TO-263AA模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	130mOhm @ 13.2A, 10V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	860 pF @ 25 V
制造商	Infineon Technologies
安装类型	Surface Mount
Product Status	Active
系列	SIPMOS®
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	4V @ 1mA

漏源电压	60 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	18.7A (Ta)
最大功耗	81.1W (Ta)

工作温度	-55°C~175°C(TJ)