SPB08P06P

Name: SPB08P06P
Brand: Infineon Technologies

模拟与电源

MOSFET P-CH 60V 8.8A TO263-3

停产/老旧TO-263-3, D2PAK (2 Leads + Tab), TO-263AB模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	300mOhm @ 6.2A, 10V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	420 pF @ 25 V
制造商	Infineon Technologies
安装类型	Surface Mount
Product Status	Obsolete
系列	SIPMOS®
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	4V @ 250µA

漏源电压	60 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	8.8A (Ta)
最大功耗	42W (Tc)

工作温度	-55°C ~ 175°C (TJ)