SIDC11D60SIC3

Infineon Technologies

SIDC11D60SIC3

模拟与电源

DIODE SIL CARB 600V 4A WAFER

已停产Die模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

基础料号SIDC11
Capacitance @ Vr, F150pF @ 1V, 1MHz
制造商Infineon Technologies
安装类型Surface Mount
Product StatusDiscontinued at
Reverse Recovery Time (trr)0 ns
技术SiC (Silicon Carbide) Schottky

电气

Voltage - DC Reverse (Vr) (Max)600 V
Voltage - Forward (Vf) (Max) @ If1.9 V @ 4 A
Current - Average Rectified (Io)4A
Current - Reverse Leakage @ Vr200 µA @ 600 V
速度No Recovery Time > 500mA (Io)

机械

封装Bulk
Package / CaseDie
供应商器件封装Sawn on foil

环境

Operating Temperature - Junction-55°C ~ 175°C