来自已导入产品 Attributes 的结构化电气、机械和环境参数。
| 基础料号 | SGD02N |
|---|---|
| Gate Charge | 11 nC |
| IGBT Type | NPT |
| 输入类型 | Standard |
| 制造商 | Infineon Technologies |
| 安装类型 | Surface Mount |
| Product Status | Obsolete |
| Switching Energy | 220µJ |
| Td (on/off) @ 25°C | 23ns/260ns |
| Test Condition | 800V, 2A, 91Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic | 3.6V @ 15V, 2A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
|---|---|
| Current - Collector (Ic) (Max) | 6.2 A |
| Current - Collector Pulsed (Icm) | 9.6 A |
| Power - Max | 62 W |
| 封装 | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| 供应商器件封装 | PG-TO252-3-11 |
| 工作温度 | -55°C ~ 150°C (TJ) |
|---|