SGB07N120ATMA1

Infineon Technologies

SGB07N120ATMA1

Datasheet

模拟与电源

IGBT 1200V 16.5A 125W TO263-3-2

已停产TO-263-3, D²Pak (2 Leads + Tab), TO-263AB模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

基础料号SGB07N
Gate Charge70 nC
IGBT TypeNPT
输入类型Standard
制造商Infineon Technologies
安装类型Surface Mount
Product StatusLast Time Buy
Switching Energy1mJ
Td (on/off) @ 25°C27ns/440ns
Test Condition800V, 8A, 47Ohm, 15V
Vce(on) (Max) @ Vge, Ic3.6V @ 15V, 8A

电气

Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)16.5 A
Current - Collector Pulsed (Icm)27 A
Power - Max125 W

机械

封装Tape & Reel (TR)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
供应商器件封装PG-TO263-3-2

环境

工作温度-55°C~150°C(TJ)