IRLU024NPBF

Infineon Technologies

IRLU024NPBF

Datasheet

模拟与电源

MOSFET N-CH 55V 17A IPAK

在产TO-251-3 Short Leads, IPak, TO-251AA模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs65mOhm @ 10A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds480 pF @ 25 V
制造商Infineon Technologies
安装类型Through Hole
Product StatusActive
系列HEXFET®
技术MOSFET (Metal Oxide)
Vgs (Max)±16V
Vgs(th) (Max) @ Id2V @ 250µA

电气

漏源电压55 V
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Current - Continuous Drain (Id) @ 25°C17A (Tc)
最大功耗45W (Tc)

机械

封装Tube
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
供应商器件封装IPAK (TO-251AA)

环境

工作温度-55°C ~ 175°C (TJ)