通用
| Rds On (Max) @ Id, Vgs | 250mOhm @ 930mA, 4.5V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 3.9 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 110 pF @ 15 V |
| 制造商 | Infineon Technologies |
| 安装类型 | Surface Mount |
| Product Status | Not For New Designs |
| 系列 | HEXFET® |
| 技术 | MOSFET (Metal Oxide) |
| Vgs (Max) | ±12V |
| Vgs(th) (Max) @ Id | 700mV @ 250µA (Min) |