IRLL024NPBF

Name: IRLL024NPBF
Brand: Infineon Technologies

模拟与电源

MOSFET N-CH 55V 3.1A SOT223

已停产TO-261-4, TO-261AA模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	65mOhm @ 3.1A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	15.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds	510 pF @ 25 V
制造商	Infineon Technologies
安装类型	Surface Mount
Product Status	Discontinued at
系列	HEXFET®
技术	MOSFET (Metal Oxide)
Vgs (Max)	±16V
Vgs(th) (Max) @ Id	2V @ 250µA

漏源电压	55 V
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Current - Continuous Drain (Id) @ 25°C	3.1A (Ta)
最大功耗	1W (Ta)

工作温度	-55°C ~ 150°C (TJ)