通用
| Rds On (Max) @ Id, Vgs | 63mOhm @ 3.4A, 4.5V |
|---|---|
| 基础料号 | IRLHS6376 |
| 配置 | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs | 2.8nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 270pF @ 25V |
| 制造商 | Infineon Technologies |
| 安装类型 | Surface Mount |
| Product Status | Active |
| 系列 | HEXFET® |
| 技术 | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1.1V @ 10µA |