IRLHS6376TR2PBF

Infineon Technologies

IRLHS6376TR2PBF

Datasheet

模拟与电源

MOSFET 2N-CH 30V 3.6A PQFN

停产/老旧6-VDFN Exposed Pad模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs63mOhm @ 3.4A, 4.5V
基础料号IRLHS6376
配置2 N-Channel (Dual)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs2.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds270pF @ 25V
制造商Infineon Technologies
安装类型Surface Mount
Product StatusObsolete
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.1V @ 10µA

电气

漏源电压30V
Current - Continuous Drain (Id) @ 25°C3.6A
Power - Max1.5W

机械

封装Cut Tape (CT)
Package / Case6-VDFN Exposed Pad
供应商器件封装6-PQFN (2x2)