通用
| Rds On (Max) @ Id, Vgs | 15.5mOhm @ 8.5A, 4.5V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1019 pF @ 25 V |
| 制造商 | Infineon Technologies |
| 安装类型 | Surface Mount |
| Product Status | Not For New Designs |
| 系列 | HEXFET® |
| 技术 | MOSFET (Metal Oxide) |
| Vgs (Max) | ±12V |
| Vgs(th) (Max) @ Id | 1.1V @ 10µA |