IRLHS6342TR2PBF

Infineon Technologies

IRLHS6342TR2PBF

Datasheet

模拟与电源

MOSFET N-CH 30V 8.7A PQFN

停产/老旧6-PowerVDFN模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs15.5mOhm @ 8.5A, 4.5V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1019 pF @ 25 V
制造商Infineon Technologies
安装类型Surface Mount
Product StatusObsolete
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.1V @ 10µA

电气

漏源电压30 V
Current - Continuous Drain (Id) @ 25°C8.7A (Ta), 19A (Tc)

机械

封装Cut Tape (CT)
Package / Case6-PowerVDFN
供应商器件封装6-PQFN (2x2)