IRLBD59N04ETRLP

Name: IRLBD59N04ETRLP
Brand: Infineon Technologies

模拟与电源

MOSFET N-CH 40V 59A TO263-5

停产/老旧TO-263-6, D²Pak (5 Leads + Tab), TO-263BA模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	18mOhm @ 35A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	50 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds	2190 pF @ 25 V
制造商	Infineon Technologies
安装类型	Surface Mount
Product Status	Obsolete
系列	HEXFET®
技术	MOSFET (Metal Oxide)
Vgs (Max)	±10V
Vgs(th) (Max) @ Id	2V @ 250µA

漏源电压	40 V
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
Current - Continuous Drain (Id) @ 25°C	59A (Tc)
最大功耗	130W (Tc)

工作温度	-55°C~175°C(TJ)