通用
| Rds On (Max) @ Id, Vgs | 4.8mOhm @ 40A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2139 pF @ 15 V |
| 制造商 | Infineon Technologies |
| 安装类型 | Through Hole |
| Product Status | Active |
| 系列 | HEXFET® |
| 技术 | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.35V @ 50µA |