IRFSL33N15D

Name: IRFSL33N15D
Brand: Infineon Technologies

模拟与电源

MOSFET N-CH 150V 33A TO262

停产/老旧TO-262-3 Long Leads, I²Pak, TO-262AA模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	56mOhm @ 20A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	2020 pF @ 25 V
制造商	Infineon Technologies
安装类型	Through Hole
Product Status	Obsolete
系列	HEXFET®
技术	MOSFET (Metal Oxide)
Vgs (Max)	±30V
Vgs(th) (Max) @ Id	5.5V @ 250µA

漏源电压	150 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	33A (Tc)
最大功耗	3.8W (Ta), 170W (Tc)

工作温度	-55°C~175°C(TJ)