IRFS7440PBF

Infineon Technologies

IRFS7440PBF

Datasheet

模拟与电源

MOSFET N CH 40V 120A D2PAK

已停产TO-263-3, D²Pak (2 Leads + Tab), TO-263AB模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs2.5mOhm @ 100A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4730 pF @ 25 V
制造商Infineon Technologies
安装类型Surface Mount
Product StatusDiscontinued at
系列HEXFET®, StrongIRFET™
技术MOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.9V @ 100µA

电气

漏源电压40 V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
最大功耗208W (Tc)

机械

封装Tube
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
供应商器件封装TO-263 (D²Pak)

环境

工作温度-55°C ~ 175°C (TJ)