通用
| Rds On (Max) @ Id, Vgs | 270mOhm @ 12A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 190 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4300 pF @ 25 V |
| 制造商 | Infineon Technologies |
| 安装类型 | Through Hole |
| 包装 | Bag |
| 产品状态 | 停产/老旧 |
| 系列 | HEXFET® |
| 技术 | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |