IRFI4019H-117P

Infineon Technologies

IRFI4019H-117P

Datasheet

模拟与电源

MOSFET 2N-CH 150V 8.7A TO220-5

停产/老旧TO-220-5 Full Pack模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs95mOhm @ 5.2A, 10V
基础料号IRFI4019
配置2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds810pF @ 25V
制造商Infineon Technologies
安装类型Through Hole
Product StatusObsolete
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4.9V @ 50µA

电气

漏源电压150V
Current - Continuous Drain (Id) @ 25°C8.7A
Power - Max18W

机械

封装Tube
Package / CaseTO-220-5 Full Pack
供应商器件封装TO-220-5 Full-Pak

环境

工作温度-55°C ~ 150°C (TJ)