IRFHM830TR2PBF

Infineon Technologies

IRFHM830TR2PBF

Datasheet

模拟与电源

MOSFET N-CH 30V 21A PQFN

停产/老旧8-VQFN Exposed Pad模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs3.8mOhm @ 20A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2155 pF @ 25 V
制造商Infineon Technologies
安装类型Surface Mount
Product StatusObsolete
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.35V @ 50µA

电气

漏源电压30 V
Current - Continuous Drain (Id) @ 25°C21A (Ta), 40A (Tc)

机械

封装Cut Tape (CT)
Package / Case8-VQFN Exposed Pad
供应商器件封装PQFN (3x3)