通用
| Rds On (Max) @ Id, Vgs | 195mOhm @ 2.9A, 10V |
|---|---|
| 基础料号 | IRFHM792 |
| 配置 | 2 N-Channel (Dual) |
| Gate Charge (Qg) (Max) @ Vgs | 6.3nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 251pF @ 25V |
| 制造商 | Infineon Technologies |
| 安装类型 | Surface Mount |
| Product Status | Obsolete |
| 系列 | HEXFET® |
| 技术 | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4V @ 10µA |