IRFH7110TRPBF

Name: IRFH7110TRPBF
Brand: Infineon Technologies

模拟与电源

MOSFET N-CH 100V 11A/58A 8PQFN

停产/老旧8-TQFN Exposed Pad模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	13.5mOhm @ 35A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	3240 pF @ 25 V
制造商	Infineon Technologies
安装类型	Surface Mount
Product Status	Obsolete
系列	HEXFET®
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	4V @ 100µA

漏源电压	100 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	11A (Ta), 58A (Tc)
最大功耗	3.6W (Ta), 104W (Tc)

工作温度	-55°C ~ 150°C (TJ)