IRFH5304TRPBF

Infineon Technologies

IRFH5304TRPBF

Datasheet

模拟与电源

MOSFET N-CH 30V 22A/79A 8PQFN

停产/老旧8-PowerVDFN模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs4.5mOhm @ 47A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2360 pF @ 10 V
制造商Infineon Technologies
安装类型Surface Mount
Product StatusObsolete
系列HEXFET®
技术MOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.35V @ 50µA

电气

漏源电压30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C22A (Ta), 79A (Tc)
最大功耗3.6W (Ta), 46W (Tc)

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / Case8-PowerVDFN
供应商器件封装8-PQFN (5x6)

环境

工作温度-55°C ~ 150°C (TJ)