IRFBL3703

Infineon Technologies

IRFBL3703

模拟与电源

MOSFET N-CH 30V 260A SUPER D2PAK

停产/老旧Super D2-Pak模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs2.5mOhm @ 76A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs209 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds8250 pF @ 25 V
制造商Infineon Technologies
安装类型Surface Mount
Product StatusObsolete
系列HEXFET®
技术MOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

电气

漏源电压30 V
Drive Voltage (Max Rds On, Min Rds On)7V, 10V
Current - Continuous Drain (Id) @ 25°C260A (Tc)
最大功耗3.8W (Ta), 300W (Tc)

机械

封装Tube
Package / CaseSuper D2-Pak
供应商器件封装SUPER D2-PAK