通用
| Rds On (Max) @ Id, Vgs | 100mOhm @ 2.2A, 10V |
|---|---|
| 基础料号 | IRF995 |
| 配置 | N and P-Channel |
| FET Feature | Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs | 14nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 190pF @ 15V |
| 制造商 | Infineon Technologies |
| 安装类型 | Surface Mount |
| Product Status | Discontinued at |
| 系列 | HEXFET® |
| 技术 | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |