IRF7907TRPBF

Infineon Technologies

IRF7907TRPBF

Datasheet

模拟与电源

MOSFET 2N-CH 30V 9.1A/11A 8SO

在产8-SOIC (0.154", 3.90mm Width)模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs16.4mOhm @ 9.1A, 10V
基础料号IRF7907
配置2 N-Channel (Dual)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs10nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds850pF @ 15V
制造商Infineon Technologies
安装类型Surface Mount
Product StatusActive
系列HEXFET®
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.35V @ 25µA

电气

漏源电压30V
Current - Continuous Drain (Id) @ 25°C9.1A, 11A
Power - Max2W

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / Case8-SOIC (0.154", 3.90mm Width)
供应商器件封装8-SO

环境

工作温度-55°C ~ 150°C (TJ)