IRF7665S2TRPBF

Infineon Technologies

IRF7665S2TRPBF

模拟与电源

MOSFET N-CH 100V 4.1A DIRECTFET

停产/老旧DirectFET™ Isometric SB模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs62mOhm @ 8.9A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds515 pF @ 25 V
制造商Infineon Technologies
安装类型Surface Mount
Product StatusObsolete
技术MOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id5V @ 25µA

电气

漏源电压100 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C4.1A (Ta), 14.4A (Tc)
最大功耗2.4W (Ta), 30W (Tc)

机械

封装Tape & Reel (TR)
Package / CaseDirectFET™ Isometric SB
供应商器件封装DIRECTFET SB

环境

工作温度-55°C ~ 175°C (TJ)