IRF6665

Infineon Technologies

IRF6665

模拟与电源

MOSFET N-CH 100V 4.2A DIRECTFET

停产/老旧DirectFET™ Isometric SH模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs62mOhm @ 5A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds530 pF @ 25 V
制造商Infineon Technologies
安装类型Surface Mount
Product StatusObsolete
技术MOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id5V @ 250µA

电气

漏源电压100 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C4.2A (Ta), 19A (Tc)
最大功耗2.2W (Ta), 42W (Tc)

机械

封装Tube
Package / CaseDirectFET™ Isometric SH
供应商器件封装DIRECTFET™ SH

环境

工作温度-40°C ~ 150°C (TJ)