IRF6646TR1PBF

Name: IRF6646TR1PBF
Brand: Infineon Technologies

模拟与电源

MOSFET N-CH 80V 12A DIRECTFET

停产/老旧DirectFET™ Isometric MN模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	9.5mOhm @ 12A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	2060 pF @ 25 V
制造商	Infineon Technologies
安装类型	Surface Mount
Product Status	Obsolete
系列	HEXFET®
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	4.9V @ 150µA

漏源电压	80 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	12A (Ta), 68A (Tc)
最大功耗	2.8W (Ta), 89W (Tc)

工作温度	-40°C~150°C(TJ)