IRF6602

Name: IRF6602
Brand: Infineon Technologies

模拟与电源

MOSFET N-CH 20V 11A DIRECTFET

停产/老旧DirectFET™ Isometric MQ模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	13mOhm @ 11A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds	1420 pF @ 10 V
制造商	Infineon Technologies
安装类型	Surface Mount
Product Status	Obsolete
系列	HEXFET®
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.3V @ 250µA

漏源电压	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	11A (Ta), 48A (Tc)
最大功耗	2.3W (Ta), 42W (Tc)