IRF5802TR

Infineon Technologies

IRF5802TR

模拟与电源

MOSFET N-CH 150V 0.9A 6-TSOP

停产/老旧SOT-23-6 Thin, TSOT-23-6模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs1.2Ohm @ 540mA, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds88 pF @ 25 V
制造商Infineon Technologies
安装类型Surface Mount
Product StatusObsolete
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id5.5V @ 250µA

电气

漏源电压150 V
Current - Continuous Drain (Id) @ 25°C900mA (Ta)

机械

封装Cut Tape (CT)
Package / CaseSOT-23-6 Thin, TSOT-23-6
供应商器件封装Micro6™(TSOP-6)