IRF1104LPBF

Infineon Technologies

IRF1104LPBF

Datasheet

模拟与电源

MOSFET N-CH 40V 100A TO-262

停产/老旧TO-262-3 Long Leads, I²Pak, TO-262AA模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs9mOhm @ 60A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2900 pF @ 25 V
制造商Infineon Technologies
安装类型Through Hole
Product StatusObsolete
系列HEXFET®
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4V @ 250µA

电气

漏源电压40 V
Current - Continuous Drain (Id) @ 25°C100A (Tc)

机械

封装Tube
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA
供应商器件封装TO-262