通用
| Rds On (Max) @ Id, Vgs | 650mOhm @ 20A, 10V |
|---|---|
| 基础料号 | IQE006 |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 82.1 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5453 pF @ 12 V |
| 制造商 | Infineon Technologies |
| 安装类型 | Through Hole |
| Product Status | Active |
| 系列 | OptiMOS™ 5 |
| 技术 | MOSFET (Metal Oxide) |
| Vgs (Max) | ±16V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |