IPW65R080CFDFKSA2

Name: IPW65R080CFDFKSA2
Brand: Infineon Technologies

模拟与电源

MOSFET N-CH 650V 43.3A TO247-3

在产TO-247-3模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	80mOhm @ 17.6A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	167 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	5030 pF @ 100 V
制造商	Infineon Technologies
安装类型	Through Hole
Product Status	Active
系列	CoolMOS™ CFD2
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	4.5V @ 1.8mA

漏源电压	650 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	43.3A (Tc)
最大功耗	391W (Tc)

工作温度	-55°C ~ 150°C (TJ)