IPU80R1K4CEBKMA1

Infineon Technologies

IPU80R1K4CEBKMA1

Datasheet

模拟与电源

MOSFET N-CH 800V 3.9A TO251-3

已停产TO-251-3 Short Leads, IPak, TO-251AA模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs1.4Ohm @ 2.3A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds570 pF @ 100 V
制造商Infineon Technologies
安装类型Through Hole
Product StatusDiscontinued at
系列CoolMOS™
技术MOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.9V @ 240µA

电气

漏源电压800 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C3.9A (Tc)
最大功耗63W (Tc)

机械

封装Tube
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
供应商器件封装PG-TO251-3

环境

工作温度-55°C~150°C(TJ)