IPU50R1K4CEBKMA1

Infineon Technologies

IPU50R1K4CEBKMA1

Datasheet

模拟与电源

MOSFET N-CH 500V 3.1A TO251-3

停产/老旧TO-251-3 Short Leads, IPak, TO-251AA模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs1.4Ohm @ 900mA, 13V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds178 pF @ 100 V
制造商Infineon Technologies
安装类型Through Hole
Product StatusObsolete
系列CoolMOS™
技术MOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.5V @ 70µA

电气

漏源电压500 V
Drive Voltage (Max Rds On, Min Rds On)13V
Current - Continuous Drain (Id) @ 25°C3.1A (Tc)
最大功耗25W (Tc)

机械

封装Tube
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
供应商器件封装PG-TO251-3

环境

工作温度-55°C ~ 150°C (TJ)