IPT65R033G7XTMA1

Infineon Technologies

IPT65R033G7XTMA1

Datasheet

模拟与电源

MOSFET N-CH 650V 69A 8HSOF

停产/老旧8-PowerSFN模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs33mOhm @ 28.9A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5000 pF @ 400 V
制造商Infineon Technologies
安装类型Surface Mount
Product StatusObsolete
系列CoolMOS™ C7
技术MOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 1.44mA

电气

漏源电压650 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C69A (Tc)
最大功耗391W (Tc)

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / Case8-PowerSFN
供应商器件封装PG-HSOF-8-2

环境

工作温度-55°C ~ 150°C (TJ)