IPS65R1K0CEAKMA2

Infineon Technologies

IPS65R1K0CEAKMA2

Datasheet

模拟与电源

MOSFET N-CH 650V 7.2A TO251-3

已停产TO-251-3 Stub Leads, IPak模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs1Ohm @ 1.5A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds328 pF @ 100 V
制造商Infineon Technologies
安装类型Through Hole
Product StatusLast Time Buy
系列CoolMOS™ CE
技术MOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.5V @ 200µA

电气

漏源电压650 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C7.2A (Tc)
最大功耗68W (Tc)

机械

封装Tube
Package / CaseTO-251-3 Stub Leads, IPak
供应商器件封装PG-TO251-3-342

环境

工作温度-55°C ~ 150°C (TJ)