IPS60R210PFD7SAKMA1

Name: IPS60R210PFD7SAKMA1
Brand: Infineon Technologies

模拟与电源

MOSFET N-CH 650V 16A TO251-3

在产TO-251-3 Short Leads, IPak, TO-251AA模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	210mOhm @ 4.9A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1015 pF @ 400 V
制造商	Infineon Technologies
安装类型	Through Hole
Product Status	Active
系列	CoolMOS™PFD7
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	4.5V @ 240µA

漏源电压	650 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	16A (Tc)
最大功耗	64W (Tc)

工作温度	-40°C~150°C(TJ)