来自已导入产品 Attributes 的结构化电气、机械和环境参数。
| Rds On (Max) @ Id, Vgs | 10mOhm @ 50A, 12V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 318 nC @ 12 V |
| 制造商 | Infineon Technologies |
| 安装类型 | Surface Mount |
| Product Status | Active |
| 系列 | CoolMOS™ S7 |
| 技术 | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4.5V @ 3.08mA |
| 漏源电压 | 600 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| 最大功耗 | 694W (Tc) |
| 封装 | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | 22-PowerBSOP Module |
| 供应商器件封装 | PG-HDSOP-22 |
| 工作温度 | -55°C ~ 150°C (TJ) |
|---|