通用
| Rds On (Max) @ Id, Vgs | 1.4mOhm @ 100A, 10V |
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| FET Type | N-Channel |
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| Gate Charge (Qg) (Max) @ Vgs | 305 nC @ 10 V |
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| Input Capacitance (Ciss) (Max) @ Vds | 13800 pF @ 30 V |
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| 制造商 | Infineon Technologies |
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| 安装类型 | Through Hole |
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| Product Status | Discontinued at |
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| 系列 | StrongIRFET™2 |
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| 技术 | MOSFET (Metal Oxide) |
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| Vgs (Max) | ±20V |
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| Vgs(th) (Max) @ Id | 3.3V @ 246µA |
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电气
| 漏源电压 | 60 V |
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| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
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| Current - Continuous Drain (Id) @ 25°C | 39A (Ta), 198A (Tc) |
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| 最大功耗 | 3.8W (Ta), 300W (Tc) |
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机械
| 封装 | Tape & Reel (TR) |
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| Package / Case | TO-220-3 |
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| 供应商器件封装 | PG-TO220-3-U05 |
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环境
