IPI90R500C3XKSA2

Infineon Technologies

IPI90R500C3XKSA2

Datasheet

模拟与电源

MOSFET N-CH 900V 11A TO262-3

在产TO-262-3 Long Leads, I2PAK, TO-262AA模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs500mOhm @ 6.6A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1700 pF @ 100 V
制造商Infineon Technologies
安装类型Through Hole
Product StatusActive
系列CoolMOS™
技术MOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.5V @ 740µA

电气

漏源电压900 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C11A (Tc)
最大功耗156W (Tc)

机械

封装Tube
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
供应商器件封装PG-TO262-3-1

环境

工作温度-55°C ~ 150°C (TJ)