IPI90R1K0C3

Infineon Technologies

IPI90R1K0C3

模拟与电源

N-CHANNEL POWER MOSFET

停产/老旧TO-262-3 Long Leads, I²Pak, TO-262AA模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs1Ohm @ 3.3A, 10V
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds850 pF @ 100 V
制造商Infineon Technologies
安装类型Through Hole
Product StatusObsolete
系列CoolMOS™
技术MOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.5V @ 370µA

电气

漏源电压900 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C5.7A (Tc)
最大功耗89W (Tc)

机械

封装Bulk
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA
供应商器件封装PG-TO262-3

环境

工作温度-55°C~150°C(TJ)