IPI072N10N3G

Name: IPI072N10N3G
Brand: Infineon Technologies

模拟与电源

OPTLMOS N-CHANNEL POWER MOSFET

在产TO-262-3 Long Leads, I²Pak, TO-262AA模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	7.2mOhm @ 80A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	4910 pF @ 50 V
制造商	Infineon Technologies
安装类型	Through Hole
Product Status	Active
系列	OptiMOS® 3
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	3.5V @ 90µA

漏源电压	100 V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
最大功耗	150W (Tc)

工作温度	-55°C~175°C(TJ)