IPG20N06S415AATMA1

Infineon Technologies

IPG20N06S415AATMA1

Datasheet

模拟与电源

MOSFET 2N-CH 60V 20A 8TDSON

停产/老旧8-PowerVDFN模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs15.5mOhm @ 17A, 10V
配置2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs29nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds2260pF @ 25V
制造商Infineon Technologies
安装类型Surface Mount, Wettable Flank
Product StatusObsolete
系列OptiMOS™
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4V @ 20µA

电气

漏源电压60V
Current - Continuous Drain (Id) @ 25°C20A
Power - Max50W

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / Case8-PowerVDFN
供应商器件封装PG-TDSON-8-10

环境

GradeAutomotive
工作温度-55°C ~ 175°C (TJ)
QualificationAEC-Q101