IPD70P04P4L08ATMA1

Infineon Technologies

IPD70P04P4L08ATMA1

Datasheet

模拟与电源

MOSFET P-CH 40V 70A TO252-3

已停产TO-252-3, DPAK (2 Leads + Tab), SC-63模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs7.8mOhm @ 70A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5430 pF @ 25 V
制造商Infineon Technologies
安装类型Surface Mount
Product StatusNot For New Designs
系列OptiMOS™
技术MOSFET (Metal Oxide)
Vgs (Max)±16V
Vgs(th) (Max) @ Id2.2V @ 120µA

电气

漏源电压40 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C70A (Tc)
最大功耗75W (Tc)

机械

封装Tape & Reel (TR) Cut Tape (CT)

环境

GradeAutomotive
工作温度-55°C ~ 175°C (TJ)
QualificationAEC-Q101