IPD65R950CFDATMA2

Name: IPD65R950CFDATMA2
Brand: Infineon Technologies

模拟与电源

MOSFET N-CH 650V 3.9A TO252-3

在产TO-252-3, DPAK (2 Leads + Tab), SC-63模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	950mOhm @ 1.5A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	14.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	380 pF @ 100 V
制造商	Infineon Technologies
安装类型	Surface Mount
Product Status	Active
系列	CoolMOS™ CFD2
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	4.5V @ 200µA

漏源电压	650 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	3.9A (Tc)
最大功耗	36.7W (Tc)

工作温度	-55°C ~ 150°C (TJ)